High-Purity Intrinsic Silicon Wafer, 520mm Square Die or 4-Inch 11N Silicon Substrate, Undoped High-Resistivity Single-Crystal Polished Wafer for Research Use (5x5mm SSP Intrinsic)

Description

• Made from 11N high-purity intrinsic silicon with no doping, ideal for material characterization and research applications.
• Available in 520mm square dies and 4-inch wafers to support various research setups.
• Single-side polished surface provides high smoothness for microscopy, film deposition, and surface analysis.
• High-resistivity intrinsic silicon suitable for semiconductor physics, optoelectronics, and materials science research.
• Individually packaged to protect the wafer during transport and ensure safe laboratory storage.

This product is a high-purity 11N intrinsic single-crystal silicon wafer with no intentional doping and high resistivity. Available in 520mm square dies and 4-inch full wafers, it is designed for semiconductor research, materials science, optoelectronic studies, and academic experiments. The single-side polished surface provides excellent smoothness for film deposition, microscopy, and surface characterization. Supplied as a non-functional research material sample, each wafer is individually packaged for safe transport and laboratory storage.

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